• 2N7000 Power MOSFET Transistor N Channel (5 Pack)
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2N7000 Power MOSFET Transistor N Channel (5 Pack)

2N7000 Power MOSFET Transistor N Channel (5 Pack)

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Order Code: 02-117

The 2N7000 is a N-channel enhancement mode Field Effect Transistor. Produced using Fairchild's proprietary, high cell density, DMOS technology. Very high density process, designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. Can be used in most applications requiring up to 400mA DC and can deliver pulsed current up to 2A. Also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.

Specifications
TypeN Channel (MOSFET)
Drain-To-Source Voltage60V
Drain-To-Gate Voltage60V
Continuous Gate Source Voltage±20V
Non Repetitive Gate Source Voltage±40V
Maximum Drain Current Continuous200mA
Maximum Drain Current Pulsed500mA
Thermal Resistance, Junction To Ambient312.5C/W
Operating Temperature-55°C to 150°C
Pins3
MountingThrough Hole
CasingTO-92
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